Parametric results for: K4H510838B-VLCC0 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

650 ps 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

R-PDSO-G54 1

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11.2 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

536.8709 Mbit 1

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DDR1 DRAM 1

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Memory Width (1)

8 1

1 hit Apply

2 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

54 1

1 hit Apply

67.1089 M 1

1 hit Apply

6.4E7 1

1 hit Apply

SYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

1 hit Apply

Organization (1)

64MX8 1

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PLASTIC/EPOXY 1

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TSSOP 1

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RECTANGULAR 1

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SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

2.6 V 1

1 hit Apply