Findchips: Parametric Search Results for K4H510838G

Parametric results for: K4H510838G under DRAMs

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		K4H510838G-LC/LB3 Samsung Semiconductor
		K4H510838G-HLCCT Samsung Semiconductor
		K4H510838G-HCC00 Samsung Semiconductor
		K4H510838G-HLCC Samsung Semiconductor
		K4H510838G-LCCCT Samsung Semiconductor
		K4H510838G-LCB3 Samsung Semiconductor
		K4H510838G-HCCC Samsung Semiconductor
		K4H510838G-HCCCT Samsung Semiconductor
		K4H510838G-HLB30 Samsung Semiconductor
		K4H510838G-LCCC0 Samsung Semiconductor

				Most Relevant								Technical																		Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Obsolete

536.8709 Mbit

64MX8

2.5 V

600 ps

FOUR BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

R-PDSO-G66

Not Qualified

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSOP2

TSOP2,

unknown

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

Check for Price

Obsolete

536.8709 Mbit

64MX8

2.6 V

550 ps

FOUR BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.5 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

500 µm

BOTTOM

1.2 mm

12 mm

9 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA,

unknown

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

TIN BISMUTH

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

220 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

TIN BISMUTH

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

260

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

260

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

220 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

TIN BISMUTH

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

1 2 3 Next

Compare

K4H510838G-LC/LB3

Samsung Semiconductor

Check for Price

Obsolete

536.8709 Mbit

64MX8

2.5 V

600 ps

FOUR BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

R-PDSO-G66

Not Qualified

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSOP2

TSOP2,

unknown

EAR99

8542.32.00.28

K4H510838G-HLCCT

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

K4H510838G-HCC00

Samsung Semiconductor

Check for Price

Obsolete

536.8709 Mbit

64MX8

2.6 V

550 ps

FOUR BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.5 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

500 µm

BOTTOM

1.2 mm

12 mm

9 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA,

unknown

EAR99

8542.32.00.28

K4H510838G-HLCC

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

K4H510838G-LCCCT

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

TIN BISMUTH

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

K4H510838G-LCB3

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

220 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

TIN BISMUTH

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

K4H510838G-HCCC

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

260

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

K4H510838G-HCCCT

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

260

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

K4H510838G-HLB30

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

220 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

K4H510838G-LCCC0

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

240 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

TIN BISMUTH

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.28

1 2 3 Next