Findchips: Parametric Search Results for K4N56163QG

Parametric results for: K4N56163QG under DRAMs

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		K4N56163QG-GC200 Samsung Semiconductor
		K4N56163QG-ZC20 Samsung Semiconductor
		K4N56163QG-ZC22T Samsung Semiconductor
		K4N56163QG-GC22T Samsung Semiconductor
		K4N56163QG-ZC2A Samsung Semiconductor
		K4N56163QG-GC2AT Samsung Semiconductor
		K4N56163QG-ZC200 Samsung Semiconductor
		K4N56163QG-ZC220 Samsung Semiconductor
		K4N56163QG-GC220 Samsung Semiconductor
		K4N56163QG-GC2A Samsung Semiconductor

			Most Relevant								Technical																		Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

500 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

16000000

16.7772 M

SYNCHRONOUS

3-STATE

YES

4,8

2.1 V

1.9 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.24

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

500 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

450 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

420 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

Check for Price

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

450 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

420 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

240

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

1.8 V

450 ps

350 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

370 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.24

Check for Price

Obsolete

268.4355 Mbit

16MX16

1.8 V

450 ps

350 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

370 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

240

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

500 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

16000000

16.7772 M

SYNCHRONOUS

3-STATE

YES

4,8

2.1 V

1.9 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.24

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

450 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

16000000

16.7772 M

SYNCHRONOUS

3-STATE

YES

4,8

10 mA

420 µA

2.1 V

1.9 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.24

Check for Price

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

450 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

16000000

16.7772 M

SYNCHRONOUS

3-STATE

YES

4,8

10 mA

420 µA

2.1 V

1.9 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.24

Check for Price

Obsolete

268.4355 Mbit

16MX16

1.8 V

450 ps

350 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

370 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

1 2 3 Next

Compare

K4N56163QG-GC200

Samsung Semiconductor

Check for Price

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

500 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

16000000

16.7772 M

SYNCHRONOUS

3-STATE

YES

4,8

2.1 V

1.9 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.24

K4N56163QG-ZC20

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

500 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

K4N56163QG-ZC22T

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

450 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

420 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

K4N56163QG-GC22T

Samsung Semiconductor

Check for Price

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

450 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

420 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

240

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

K4N56163QG-ZC2A

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

1.8 V

450 ps

350 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

370 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.24

K4N56163QG-GC2AT

Samsung Semiconductor

Check for Price

Obsolete

268.4355 Mbit

16MX16

1.8 V

450 ps

350 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

370 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

240

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

K4N56163QG-ZC200

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

500 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

16000000

16.7772 M

SYNCHRONOUS

3-STATE

YES

4,8

2.1 V

1.9 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.24

K4N56163QG-ZC220

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

450 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

16000000

16.7772 M

SYNCHRONOUS

3-STATE

YES

4,8

10 mA

420 µA

2.1 V

1.9 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.24

K4N56163QG-GC220

Samsung Semiconductor

Check for Price

Obsolete

268.4355 Mbit

16MX16

2 V

350 ps

450 MHz

8192

FOUR BANK PAGE BURST

DDR2 DRAM

AUTO/SELF REFRESH

COMMON

4,8

16000000

16.7772 M

SYNCHRONOUS

3-STATE

YES

4,8

10 mA

420 µA

2.1 V

1.9 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA84,9X15,32

compliant

EAR99

8542.32.00.24

K4N56163QG-GC2A

Samsung Semiconductor

Check for Price

Obsolete

268.4355 Mbit

16MX16

1.8 V

450 ps

350 MHz

8192

GDDR2 DRAM

COMMON

4,8

16000000

16.7772 M

3-STATE

4,8

10 mA

370 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA84,9X15,32

unknown

EAR99

8542.32.00.24

1 2 3 Next