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K4S513233F-MC75
Samsung Semiconductor
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Check for Price | No | Active | 536.8709 Mbit | 32 | 16MX32 | 5.4 ns | 133 MHz | 8192 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 16000000 | 16.7772 M | 3-STATE | 1,2,4,8,FP | 1 mA | 300 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | ||||||||||||||||||||
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K4S513233F-ML1H
Samsung Semiconductor
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Check for Price | No | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 7 ns | 111 MHz | 8192 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 16000000 | 16.7772 M | 3-STATE | 1,2,4,8,FP | 1 mA | 280 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.28 | FBGA, BGA90,9X15,32 | |||||||||||||||||||
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K4S513233F-EL1L
Samsung Semiconductor
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Check for Price | Yes | Active | 536.8709 Mbit | 32 | 16MX32 | 7 ns | 111 MHz | 8192 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 16000000 | 16.7772 M | 3-STATE | 1,2,4,8,FP | 1 mA | 240 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | ||||||||||||||||||||||
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K4S513233F-EL750
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e1 | 3 | 70 °C | -25 °C | 260 | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | LFBGA, | BGA | 90 | ||||||||||||
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K4S513233F-EF1H
Samsung Semiconductor
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Check for Price | Yes | Active | 536.8709 Mbit | 32 | 16MX32 | 7 ns | 111 MHz | 8192 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 16000000 | 16.7772 M | 3-STATE | 1,2,4,8,FP | 1 mA | 280 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | ||||||||||||||||||||||
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K4S513233F-EF1H0
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 3 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e1 | 3 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | LFBGA, | BGA | 90 | |||||||||||||
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K4S513233F-EF1L0
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 3 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e1 | 3 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | LFBGA, | BGA | 90 | |||||||||||||
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K4S513233F-MC1L
Samsung Semiconductor
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Check for Price | No | Active | 536.8709 Mbit | 32 | 16MX32 | 7 ns | 111 MHz | 8192 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 16000000 | 16.7772 M | 3-STATE | 1,2,4,8,FP | 1 mA | 240 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | ||||||||||||||||||||
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K4S513233F-ML750
Samsung Semiconductor
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Check for Price | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.28 | LFBGA, | BGA | 90 | |||||||||||||||||
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K4S513233F-ML1L0
Samsung Semiconductor
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Check for Price | No | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 3 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | LFBGA, | BGA | 90 |