Parametric results for: K4S513233F under DRAMs

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Manufacturer Part Number: k4s513233f
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K4S513233F-MC75
Samsung Semiconductor
Check for Price No Active 536.8709 Mbit 32 16MX32 5.4 ns 133 MHz 8192 SYNCHRONOUS DRAM COMMON 1,2,4,8 16000000 16.7772 M 3-STATE 1,2,4,8,FP 1 mA 300 µA CMOS OTHER R-PBGA-B90 Not Qualified e0 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.28
K4S513233F-ML1H
Samsung Semiconductor
Check for Price No Obsolete 536.8709 Mbit 32 16MX32 7 ns 111 MHz 8192 SYNCHRONOUS DRAM COMMON 1,2,4,8 16000000 16.7772 M 3-STATE 1,2,4,8,FP 1 mA 280 µA CMOS OTHER R-PBGA-B90 Not Qualified e0 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.28 FBGA, BGA90,9X15,32
K4S513233F-EL1L
Samsung Semiconductor
Check for Price Yes Active 536.8709 Mbit 32 16MX32 7 ns 111 MHz 8192 SYNCHRONOUS DRAM COMMON 1,2,4,8 16000000 16.7772 M 3-STATE 1,2,4,8,FP 1 mA 240 µA CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.28
K4S513233F-EL750
Samsung Semiconductor
Check for Price Yes Obsolete 536.8709 Mbit 32 16MX32 3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 70 °C -25 °C 260 90 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.28 LFBGA, BGA 90
K4S513233F-EF1H
Samsung Semiconductor
Check for Price Yes Active 536.8709 Mbit 32 16MX32 7 ns 111 MHz 8192 SYNCHRONOUS DRAM COMMON 1,2,4,8 16000000 16.7772 M 3-STATE 1,2,4,8,FP 1 mA 280 µA CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.28
K4S513233F-EF1H0
Samsung Semiconductor
Check for Price Yes Obsolete 536.8709 Mbit 32 16MX32 3 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 70 °C -25 °C 90 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.28 LFBGA, BGA 90
K4S513233F-EF1L0
Samsung Semiconductor
Check for Price Yes Obsolete 536.8709 Mbit 32 16MX32 3 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 70 °C -25 °C 90 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.28 LFBGA, BGA 90
K4S513233F-MC1L
Samsung Semiconductor
Check for Price No Active 536.8709 Mbit 32 16MX32 7 ns 111 MHz 8192 SYNCHRONOUS DRAM COMMON 1,2,4,8 16000000 16.7772 M 3-STATE 1,2,4,8,FP 1 mA 240 µA CMOS OTHER R-PBGA-B90 Not Qualified e0 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.28
K4S513233F-ML750
Samsung Semiconductor
Check for Price Obsolete 536.8709 Mbit 32 16MX32 3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 90 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.4 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.28 LFBGA, BGA 90
K4S513233F-ML1L0
Samsung Semiconductor
Check for Price No Obsolete 536.8709 Mbit 32 16MX32 3 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C NOT SPECIFIED NOT SPECIFIED 90 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.4 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.28 LFBGA, BGA 90