Findchips: Parametric Search Results for K4S64163LF-GF


Select Parts		Part Number

		K4S64163LF-GF1L Samsung Semiconductor
		K4S64163LF-GF1H Samsung Semiconductor
		K4S64163LF-GF15 Samsung Semiconductor
		K4S64163LF-GF75 Samsung Semiconductor

		Most Relevant								Technical																		Compliance		Operating Conditions		Physical										Dimensions			Other
Composite Price	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Obsolete

67.1089 Mbit

4MX16

2.5 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

4000000

4.1943 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

100 µA

2.7 V

2.3 V

CMOS

OTHER

R-PBGA-B52

Not Qualified

70 °C

-25 °C

PLASTIC/EPOXY

VFBGA

BGA52,6X13,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

750 µm

BOTTOM

1 mm

11 mm

6.6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

VFBGA, BGA52,6X13,30

compliant

EAR99

8542.32.00.02

Check for Price

Obsolete

67.1089 Mbit

4MX16

2.5 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

4000000

4.1943 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

110 µA

2.7 V

2.3 V

CMOS

OTHER

R-PBGA-B52

Not Qualified

70 °C

-25 °C

PLASTIC/EPOXY

VFBGA

BGA52,6X13,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

750 µm

BOTTOM

1 mm

11 mm

6.6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

VFBGA, BGA52,6X13,30

compliant

EAR99

8542.32.00.02

Check for Price

Obsolete

67.1089 Mbit

4MX16

2.5 V

9 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

4000000

4.1943 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

80 µA

2.7 V

2.3 V

CMOS

OTHER

R-PBGA-B52

Not Qualified

70 °C

-25 °C

PLASTIC/EPOXY

VFBGA

BGA52,6X13,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

750 µm

BOTTOM

1 mm

11 mm

6.6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

VFBGA, BGA52,6X13,30

compliant

EAR99

8542.32.00.02

Check for Price

Obsolete

67.1089 Mbit

4MX16

2.5 V

5.4 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

4000000

4.1943 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

115 µA

2.7 V

2.3 V

CMOS

OTHER

R-PBGA-B52

Not Qualified

70 °C

-25 °C

PLASTIC/EPOXY

VFBGA

BGA52,6X13,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

750 µm

BOTTOM

1 mm

11 mm

6.6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

VFBGA, BGA52,6X13,30

compliant

EAR99

8542.32.00.02

Compare

K4S64163LF-GF1L

Samsung Semiconductor

Check for Price

Obsolete

67.1089 Mbit

4MX16

2.5 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

4000000

4.1943 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

100 µA

2.7 V

2.3 V

CMOS

OTHER

R-PBGA-B52

Not Qualified

70 °C

-25 °C

PLASTIC/EPOXY

VFBGA

BGA52,6X13,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

750 µm

BOTTOM

1 mm

11 mm

6.6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

VFBGA, BGA52,6X13,30

compliant

EAR99

8542.32.00.02

K4S64163LF-GF1H

Samsung Semiconductor

Check for Price

Obsolete

67.1089 Mbit

4MX16

2.5 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

4000000

4.1943 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

110 µA

2.7 V

2.3 V

CMOS

OTHER

R-PBGA-B52

Not Qualified

70 °C

-25 °C

PLASTIC/EPOXY

VFBGA

BGA52,6X13,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

750 µm

BOTTOM

1 mm

11 mm

6.6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

VFBGA, BGA52,6X13,30

compliant

EAR99

8542.32.00.02

K4S64163LF-GF15

Samsung Semiconductor

Check for Price

Obsolete

67.1089 Mbit

4MX16

2.5 V

9 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

4000000

4.1943 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

80 µA

2.7 V

2.3 V

CMOS

OTHER

R-PBGA-B52

Not Qualified

70 °C

-25 °C

PLASTIC/EPOXY

VFBGA

BGA52,6X13,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

750 µm

BOTTOM

1 mm

11 mm

6.6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

VFBGA, BGA52,6X13,30

compliant

EAR99

8542.32.00.02

K4S64163LF-GF75

Samsung Semiconductor

Check for Price

Obsolete

67.1089 Mbit

4MX16

2.5 V

5.4 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

4000000

4.1943 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

115 µA

2.7 V

2.3 V

CMOS

OTHER

R-PBGA-B52

Not Qualified

70 °C

-25 °C

PLASTIC/EPOXY

VFBGA

BGA52,6X13,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

750 µm

BOTTOM

1 mm

11 mm

6.6 mm

SAMSUNG SEMICONDUCTOR INC

BGA

VFBGA, BGA52,6X13,30

compliant

EAR99

8542.32.00.02

Parametric results for: K4S64163LF-GF under DRAMs