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K4S64163LH-RE1L0
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | OTHER | S-PBGA-B54 | Not Qualified | 85 °C | -25 °C | 240 | 30 | 54 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 8 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, | 54 | compliant | EAR99 | 8542.32.00.02 | |||||||||||||
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K4S64163LH-RE1H
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 16 | 4MX16 | 7 ns | 105 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 4000000 | 4.1943 M | 3-STATE | 1,2,4,8,FP | 500 µA | 110 µA | CMOS | OTHER | S-PBGA-B54 | Not Qualified | e0 | 85 °C | -25 °C | 54 | PLASTIC/EPOXY | FBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4S64163LH-RE75
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 16 | 4MX16 | 5.4 ns | 133 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 4000000 | 4.1943 M | 3-STATE | 1,2,4,8,FP | 500 µA | 115 µA | CMOS | OTHER | S-PBGA-B54 | Not Qualified | e0 | 85 °C | -25 °C | 54 | PLASTIC/EPOXY | FBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4S64163LH-RE1H0
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | OTHER | S-PBGA-B54 | Not Qualified | 85 °C | -25 °C | 240 | 30 | 54 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 8 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, | 54 | compliant | EAR99 | 8542.32.00.02 | |||||||||||||
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K4S64163LH-RE1L
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 16 | 4MX16 | 7 ns | 105 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 4000000 | 4.1943 M | 3-STATE | 1,2,4,8,FP | 500 µA | 100 µA | CMOS | OTHER | S-PBGA-B54 | Not Qualified | e0 | 85 °C | -25 °C | 54 | PLASTIC/EPOXY | FBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4S64163LH-RE750
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | OTHER | S-PBGA-B54 | Not Qualified | 85 °C | -25 °C | 240 | 30 | 54 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 8 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, | 54 | compliant | EAR99 | 8542.32.00.02 |