Register or Sign In
Parametric » Memory » DRAMs

Parametric results for: K4S643232E-TI under DRAMs

Filter Your Search

1 - 6 of 6 results

|
6 hits
6 hits
6 hits
-
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
-
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
Manufacturer Part Number: k4s643232eti
Select parts from the table below to compare.
 Compare
Compare
K4S643232E-TI700
 Samsung Semiconductor 		Check for Price No Obsolete 67.1089 Mbit 32 2MX32 3.3 V 5.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 2000000 2.0972 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 Not Qualified 85 °C -45 °C 240 30 86 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, 86 compliant EAR99 8542.32.00.02
K4S643232E-TI60T
 Samsung Semiconductor 		Check for Price No Obsolete 67.1089 Mbit 32 2MX32 3.3 V 5.5 ns 166 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 2000000 2.0972 M 3-STATE 1,2,4,8,FP 2 mA 180 µA CMOS INDUSTRIAL R-PDSO-G86 Not Qualified e0 85 °C -40 °C 86 PLASTIC/EPOXY TSSOP TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Tin/Lead (Sn/Pb) GULL WING 500 µm DUAL SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP86,.46,20 unknown EAR99 8542.32.00.02
K4S643232E-TI70
 Samsung Semiconductor 		Check for Price No Obsolete 67.1089 Mbit 32 2MX32 3.3 V 5.5 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 170 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 Not Qualified e0 85 °C -45 °C 86 PLASTIC/EPOXY TSOP2 TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 86 compliant EAR99 8542.32.00.02
K4S643232E-TI70T
 Samsung Semiconductor 		Check for Price No Obsolete 67.1089 Mbit 32 2MX32 3.3 V 5.5 ns 143 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 2000000 2.0972 M 3-STATE 1,2,4,8,FP 2 mA 170 µA CMOS INDUSTRIAL R-PDSO-G86 Not Qualified e0 85 °C -40 °C 86 PLASTIC/EPOXY TSSOP TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Tin/Lead (Sn/Pb) GULL WING 500 µm DUAL SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP86,.46,20 unknown EAR99 8542.32.00.02
K4S643232E-TI60
 Samsung Semiconductor 		Check for Price No Obsolete 67.1089 Mbit 32 2MX32 3.3 V 5.5 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 185 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 Not Qualified e0 85 °C -45 °C 86 PLASTIC/EPOXY TSOP2 TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSSOP86,.46,20 86 compliant EAR99 8542.32.00.02
K4S643232E-TI600
 Samsung Semiconductor 		Check for Price No Obsolete 67.1089 Mbit 32 2MX32 3.3 V 5.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 2000000 2.0972 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 Not Qualified 85 °C -45 °C 240 30 86 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, 86 compliant EAR99 8542.32.00.02