Findchips: Parametric Search Results for K4S643233F

Parametric results for: K4S643233F under DRAMs

Select parts from the table below to compare.

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Select Parts		Part Number

		K4S643233F-DE75 Samsung Semiconductor
		K4S643233F-SI1L Samsung Semiconductor
		K4S643233F-SN75 Samsung Semiconductor
		K4S643233F-DP1L Samsung Semiconductor
		K4S643233F-DE1H Samsung Semiconductor
		K4S643233F-DN1H Samsung Semiconductor
		K4S643233F-DE1L Samsung Semiconductor
		K4S643233F-SP75 Samsung Semiconductor
		K4S643233F-DN1L Samsung Semiconductor
		K4S643233F-DI1H Samsung Semiconductor

			Most Relevant								Technical																		Compliance			Operating Conditions				Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

5.4 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

135 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

Check for Price

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B90

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

Check for Price

Obsolete

67.1089 Mbit

2MX32

3 V

5.4 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

135 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B90

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

Check for Price

Obsolete

67.1089 Mbit

2MX32

3 V

5.4 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

135 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B90

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B90

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

1 2 3 Next

Compare

K4S643233F-DE75

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

5.4 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

135 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

K4S643233F-SI1L

Samsung Semiconductor

Check for Price

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B90

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

K4S643233F-SN75

Samsung Semiconductor

Check for Price

Obsolete

67.1089 Mbit

2MX32

3 V

5.4 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

135 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

K4S643233F-DP1L

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B90

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

K4S643233F-DE1H

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

K4S643233F-DN1H

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

K4S643233F-DE1L

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

K4S643233F-SP75

Samsung Semiconductor

Check for Price

Obsolete

67.1089 Mbit

2MX32

3 V

5.4 ns

133 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

135 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B90

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

K4S643233F-DN1L

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

OTHER

R-PBGA-B90

Not Qualified

85 °C

-25 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

K4S643233F-DI1H

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

2MX32

3 V

7 ns

105 MHz

4096

FOUR BANK PAGE BURST

SYNCHRONOUS DRAM

AUTO/SELF REFRESH

COMMON

1,2,4,8

2000000

2.0972 M

SYNCHRONOUS

3-STATE

YES

1,2,4,8,FP

500 µA

120 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B90

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.4 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

BGA

LFBGA, BGA90,9X15,32

compliant

EAR99

8542.32.00.02

1 2 3 Next