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K4S643233H-FG60
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 32 | 2MX32 | 5.4 ns | 166 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 2000000 | 2.0972 M | 3-STATE | 1,2,4,8,FP | 500 µA | 145 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4S643233H-FN600
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 85 °C | -25 °C | 240 | 30 | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | BGA | LFBGA, | 90 | |||||||||||||
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K4S643233H-FE60
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 32 | 2MX32 | 5.4 ns | 166 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 2000000 | 2.0972 M | 3-STATE | 1,2,4,8,FP | 500 µA | 145 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4S643233H-FN1H0
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 3 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 85 °C | -25 °C | 240 | 30 | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | BGA | LFBGA, | 90 | |||||||||||||
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K4S643233H-FC750
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 3 V | 6 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | 240 | 30 | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | BGA | LFBGA, | 90 | |||||||||||||
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K4S643233H-FC1H
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 32 | 2MX32 | 7 ns | 105 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 2000000 | 2.0972 M | 3-STATE | 1,2,4,8,FP | 500 µA | 120 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4S643233H-FF75
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 32 | 2MX32 | 6 ns | 133 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 2000000 | 2.0972 M | 3-STATE | 1,2,4,8,FP | 500 µA | 135 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4S643233H-FL750
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 3 V | 6 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | 240 | 30 | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | BGA | LFBGA, | 90 | |||||||||||||
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K4S643233H-FF1H
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 32 | 2MX32 | 7 ns | 105 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 2000000 | 2.0972 M | 3-STATE | 1,2,4,8,FP | 500 µA | 120 µA | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4S643233H-FC1L0
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 3 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | 240 | 30 | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.02 | BGA | LFBGA, | 90 |