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K4T51083QG-HCE7
Samsung Semiconductor
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Check for Price | Yes | Active | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 400 ps | 400 MHz | 8192 | DDR2 DRAM | COMMON | 4,8 | 64000000 | 67.1089 M | 3-STATE | 4,8 | 8 mA | 210 µA | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 3 | 95 °C | 260 | 60 | PLASTIC/EPOXY | FBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | ||||||||||||||||||
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K4T51083QG-HCE6
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 450 ps | 333 MHz | 8192 | DDR2 DRAM | COMMON | 4,8 | 64000000 | 67.1089 M | 3-STATE | 4,8 | 8 mA | 175 µA | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 3 | 95 °C | 260 | 60 | PLASTIC/EPOXY | FBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | |||||||||||||||||
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K4T51083QG-HCF7
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 400 ps | 400 MHz | 8192 | DDR2 DRAM | COMMON | 4,8 | 64000000 | 67.1089 M | 3-STATE | 4,8 | 8 mA | 210 µA | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 3 | 95 °C | 260 | 60 | PLASTIC/EPOXY | FBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | |||||||||||||||||
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K4T51083QG-HCF70
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 400 ps | 400 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 210 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 3 | 95 °C | 260 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 9.5 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.28 | BGA | TFBGA, BGA60,9X11,32 | 60 | ||||
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K4T51083QG-HCD50
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 500 ps | 267 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 4.5 mA | 175 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 9.5 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.28 | BGA | TFBGA, BGA60,9X11,32 | 60 | ||||||
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K4T51083QG-HCF7T
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 400 ps | 400 MHz | 8192 | DDR2 DRAM | COMMON | 4,8 | 64000000 | 67.1089 M | 3-STATE | 4,8 | 8 mA | 210 µA | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 3 | 95 °C | 260 | 60 | PLASTIC/EPOXY | FBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.28 | ||||||||||||||||||
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K4T51083QG-HCCC0
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 600 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 4.5 mA | 175 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 9.5 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.28 | BGA | TFBGA, BGA60,9X11,32 | 60 | ||||||
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K4T51083QG-HCF80
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 350 ps | 533 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 210 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | 85 °C | 260 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 9.5 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | BGA | TFBGA, BGA60,9X11,32 | 60 | |||||||
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K4T51083QG-HCD5
Samsung Semiconductor
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Check for Price | Yes | Active | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 500 ps | 267 MHz | 8192 | DDR2 DRAM | COMMON | 4,8 | 64000000 | 67.1089 M | 3-STATE | 4,8 | 4.5 mA | 175 µA | CMOS | OTHER | R-PBGA-B60 | Not Qualified | 95 °C | 60 | PLASTIC/EPOXY | FBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.28 | FBGA, BGA60,9X11,32 | |||||||||||||||||||||
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K4T51083QG-HCCCT
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 600 ps | 200 MHz | 8192 | DDR2 DRAM | COMMON | 4,8 | 64000000 | 67.1089 M | 3-STATE | 4,8 | 4.5 mA | 175 µA | CMOS | OTHER | R-PBGA-B60 | Not Qualified | 95 °C | 60 | PLASTIC/EPOXY | FBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.28 | FBGA, BGA60,9X11,32 |