Parametric results for: K4X56323PN-8GC6 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

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Access Time-Max (1)

5.5 ns 1

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AUTO/SELF REFRESH 1

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R-PBGA-B90 1

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e1 1

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13 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

268.4355 Mbit 1

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DDR1 DRAM 1

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Memory Width (1)

32 1

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1.0 1

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1 1

1 hit Apply

90 1

1 hit Apply

8.3886 M 1

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8000000.0 1

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SYNCHRONOUS 1

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Organization (1)

8MX32 1

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PLASTIC/EPOXY 1

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VFBGA 1

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RECTANGULAR 1

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GRID ARRAY, VERY THIN PROFILE, FINE PITCH 1

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Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply