Parametric results for: K5C6481NTBM under Other Memory ICs

All Filters Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup)

ALSO CONTAINS 512K X 16 BIT FULL CMOS SRAM 1

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R-PBGA-B81 1

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10.8 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

67.1089 Mbit 1

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MEMORY CIRCUIT 1

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Memory Width (1)

16 1

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1.0 1

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81 1

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4.1943 M 1

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4000000.0 1

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ASYNCHRONOUS 1

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85.0 °C 1

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-40.0 °C 1

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Organization (1)

4MX16 1

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PLASTIC/EPOXY 1

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TFBGA 1

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RECTANGULAR 1

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GRID ARRAY, THIN PROFILE, FINE PITCH 1

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Supply Voltage-Nom (Vsup) (1)

3 V 1

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