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K6F2016U4E-EF55
Samsung Semiconductor
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Check for Price | No | Obsolete | 2.0972 Mbit | 16 | 128KX16 | 3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 µA | 1.5 V | 21 µA | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e0 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 1 mm | 7 mm | 6 mm | SAMSUNG SEMICONDUCTOR INC | BGA | 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | 48 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||
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K6F2016U4E-EF55T
Samsung Semiconductor
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Check for Price | No | Obsolete | 2.0972 Mbit | 16 | 128KX16 | 3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 µA | 1.5 V | 21 µA | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 1 mm | 7 mm | 6 mm | SAMSUNG SEMICONDUCTOR INC | VFBGA, BGA48,6X8,30 | unknown | 3A991.B.2.A | 8542.32.00.41 |