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K6F8016U6B-EF55
Samsung Semiconductor
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 6 µA | 1.5 V | 28 µA | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e0 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 1 mm | 7 mm | 6 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, BGA48,6X8,30 | 48 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||
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K6F8016U6D-XF55T
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 6 µA | 1.5 V | 28 µA | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 7 mm | 6 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, BGA48,6X8,30 | 48 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||
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K6F8016U6M-FF550
Samsung Semiconductor
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Check for Price | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 55 ns | STANDARD SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.2 mm | 12 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, | 48 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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K6F8016U6C-FF700
Samsung Semiconductor
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Check for Price | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 70 ns | STANDARD SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 7 mm | 6 mm | SAMSUNG SEMICONDUCTOR INC | BGA | 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | 48 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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K6F8016U6C-FF550
Samsung Semiconductor
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Check for Price | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 55 ns | STANDARD SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 7 mm | 6 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, | 48 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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K6F8016U6D-XF55
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 55 ns | STANDARD SRAM | COMMON | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 6 µA | 1.5 V | 28 µA | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | FBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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K6F8016U6B-EF700
Samsung Semiconductor
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Check for Price | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 70 ns | STANDARD SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 7 mm | 6 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, | 48 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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K6F8016U6M-FF700
Samsung Semiconductor
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Check for Price | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 70 ns | STANDARD SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.2 mm | 12 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, | 48 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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K6F8016U6C-FF55
Samsung Semiconductor
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Check for Price | No | Obsolete | SAMSUNG SEMICONDUCTOR INC | , | unknown | EAR99 | 8542.32.00.41 | |||||||||||||||||||||||||||||||||||||||||||
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K6F8016U6D-FF55T
Samsung Semiconductor
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 55 ns | STANDARD SRAM | COMMON | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 6 µA | 1.5 V | 28 µA | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | FBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA48,6X8,30 | unknown | 3A991.B.2.A | 8542.32.00.41 |