Parametric results for: K6F8016V3M-RB55 under SRAMs

All Filters Access Time-Max JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

55 ns 2

2 hits Apply

R-PDSO-G44 2

2 hits Apply

18.41 mm 2

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

8.3886 Mbit 2

2 hits Apply

STANDARD SRAM 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

1.0 2

2 hits Apply

44 2

2 hits Apply

524.288 k 2

2 hits Apply

512000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

512KX16 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP2 1 TSOP2-R 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply