Parametric results for: K6R1008C1B-TI10 under SRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

10 ns 2

2 hits Apply

COMMON 2

2 hits Apply

R-PDSO-G32 2

2 hits Apply

e0 2

2 hits Apply

20.95 mm 1

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

1.0486 Mbit 2

2 hits Apply

STANDARD SRAM 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 1

2 hits Apply

32 2

2 hits Apply

131.072 k 2

2 hits Apply

128000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

128KX8 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP 1 TSOP2 1

2 hits Apply

TSOP32,.46 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply