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K6R4016V1C-FP20T
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 20 ns | STANDARD SRAM | COMMON | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 700 µA | 2 V | 145 µA | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e0 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | FBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA48,6X8,30 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K6R4016V1C-TP15
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 15 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 700 µA | 2 V | 155 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e0 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2, TSOP44,.46,32 | unknown | 3A991.B.2.A | 8542.32.00.41 | TSOP2 | 44 | |||
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K6R4016V1C-JC15T
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 15 ns | STANDARD SRAM | COMMON | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 700 µA | 2 V | 140 µA | CMOS | COMMERCIAL | R-PDSO-J44 | Not Qualified | e0 | 70 °C | 44 | PLASTIC/EPOXY | SOJ | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | J BEND | 1.27 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | SOJ, SOJ44,.44 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K6R4016V1C-FC15
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 15 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 700 µA | 2 V | 140 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B48 | Not Qualified | e0 | 70 °C | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 1.2 mm | 9 mm | 9 mm | SAMSUNG SEMICONDUCTOR INC | TFBGA, BGA48,6X8,30 | unknown | 3A991.B.2.A | 8542.32.00.41 | BGA | 48 | |||||
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K6R4016V1C-FC20
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 20 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 130 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B48 | Not Qualified | e0 | 70 °C | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 750 µm | BOTTOM | 1.2 mm | 9 mm | 9 mm | SAMSUNG SEMICONDUCTOR INC | TFBGA, BGA48,6X8,30 | unknown | 3A991.B.2.A | 8542.32.00.41 | BGA | 48 | |||||
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K6R4016V1C-FL20
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 20 ns | STANDARD SRAM | COMMON | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 700 µA | 2 V | 130 µA | CMOS | COMMERCIAL | R-PBGA-B48 | Not Qualified | e0 | 70 °C | 48 | PLASTIC/EPOXY | FBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA48,6X8,30 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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K6R4016V1C-TC10
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 700 µA | 2 V | 160 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e0 | 70 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2, TSOP44,.46,32 | unknown | 3A991.B.2.A | 8542.32.00.41 | TSOP2 | 44 | ||||
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K6R4016V1C-JP20T
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 20 ns | STANDARD SRAM | COMMON | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 700 µA | 2 V | 145 µA | CMOS | INDUSTRIAL | R-PDSO-J44 | Not Qualified | e0 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | SOJ | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | SOJ, SOJ44,.44 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K6R4016V1C-FP120
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 12 ns | STANDARD SRAM | COMMON | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 700 µA | 2 V | 165 µA | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 1 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | FBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA48,6X8,30 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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K6R4016V1C-TC12
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 12 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 700 µA | 2 V | 150 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e0 | 70 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | 0.400 INCH, TSOP2-44 | unknown | 3A991.B.2.A | 8542.32.00.41 | TSOP2 | 44 |