Parametric results for: K7I641882M-EI250 under SRAMs

All Filters Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

450 ps 1

1 hit Apply

PIPELINED ARCHITECTURE 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

250 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

R-PBGA-B165 1

1 hit Apply

e1 1

1 hit Apply

17 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

75.4975 Mbit 1

1 hit Apply

DDR SRAM 1

1 hit Apply

Memory Width (1)

18 1

1 hit Apply

2 1

1 hit Apply

1.0 1

1 hit Apply

165 1

1 hit Apply

4.1943 M 1

1 hit Apply

4000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

4MX18 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

LBGA 1

1 hit Apply

BGA165,11X15,40 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, LOW PROFILE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply