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K7N163601M-HC13T
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 4.2 ns | ZBT SRAM | COMMON | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 3.14 V | 380 µA | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA119,7X17,50 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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K7N163601M-QC16
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 3.5 ns | ZBT SRAM | COMMON | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 3.14 V | 420 µA | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 70 °C | 100 | PLASTIC/EPOXY | QFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | TIN LEAD | GULL WING | 635 µm | QUAD | SAMSUNG SEMICONDUCTOR INC | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K7N163601M-TC150
Samsung Semiconductor
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Check for Price | Obsolete | SAMSUNG SEMICONDUCTOR INC | LQFP, | unknown | 3A991.B.2.A | 8542.32.00.41 | QFP | 100 | |||||||||||||||||||||||||||||||||||||||||||
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K7N163601M-HC16
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 3.3 V | 3.5 ns | ZBT SRAM | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 3.14 V | 420 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA, BGA119,7X17,50 | unknown | 3A991.B.2.A | 8542.32.00.41 | BGA | 119 | |||||
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K7N163601M-TC16
Samsung Semiconductor
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Check for Price | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 3.3 V | 3.5 ns | ZBT SRAM | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | LQFP, | unknown | 3A991.B.2.A | 8542.32.00.41 | QFP | 100 | |||||||||||||
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K7N163601M-HC15T
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 3.8 ns | ZBT SRAM | COMMON | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 3.14 V | 400 µA | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA119,7X17,50 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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K7N163601M-TC13
Samsung Semiconductor
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Check for Price | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 3.3 V | 4.2 ns | ZBT SRAM | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | LQFP, | unknown | 3A991.B.2.A | 8542.32.00.41 | QFP | 100 | |||||||||||||
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K7N163601M-QC13
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 4.2 ns | ZBT SRAM | COMMON | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 3.14 V | 380 µA | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 70 °C | 100 | PLASTIC/EPOXY | QFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | TIN LEAD | GULL WING | 635 µm | QUAD | SAMSUNG SEMICONDUCTOR INC | QFP, QFP100,.63X.87 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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K7N163601M-EC16
Samsung Semiconductor
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Check for Price | Yes | Active | 18.8744 Mbit | 36 | 512KX36 | 3.5 ns | ZBT SRAM | COMMON | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 420 µA | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA119,7X17,50 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||
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K7N163601M-EC13
Samsung Semiconductor
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Check for Price | Yes | Active | 18.8744 Mbit | 36 | 512KX36 | 4.2 ns | ZBT SRAM | COMMON | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 380 µA | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA119,7X17,50 | compliant | 3A991.B.2.A | 8542.32.00.41 |