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K7R163684B-FI300
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 1.8 V | 450 ps | 300 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 230 mA | 1.7 V | 550 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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K7R163684B-FI160
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 1.8 V | 500 ps | 166 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 170 mA | 1.7 V | 400 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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K7R163684B-EI30T
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 450 ps | 300 MHz | STANDARD SRAM | SEPARATE | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 230 mA | 1.7 V | 550 µA | CMOS | R-PBGA-B165 | Not Qualified | e3 | 1 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | MATTE TIN | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||
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K7R163684B-FC160
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 1.8 V | 500 ps | 166 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 170 mA | 1.7 V | 400 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 70 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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K7R163684B-EC30T
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 450 ps | 300 MHz | STANDARD SRAM | SEPARATE | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 230 mA | 1.7 V | 550 µA | CMOS | R-PBGA-B165 | Not Qualified | e3 | 1 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | MATTE TIN | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||
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K7R163684B-EC25T
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 450 ps | 250 MHz | STANDARD SRAM | SEPARATE | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 210 mA | 1.7 V | 500 µA | CMOS | R-PBGA-B165 | Not Qualified | e3 | 1 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | MATTE TIN | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||
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K7R163684B-EI250
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 1.8 V | 450 ps | 250 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 210 mA | 1.7 V | 500 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 2 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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K7R163684B-EC300
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 1.8 V | 450 ps | 300 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 230 mA | 1.7 V | 550 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 2 | 70 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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K7R163684B-FC330
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 1.8 V | 450 ps | QDR SRAM | PIPELINED ARCHITECTURE | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 70 °C | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LBGA, | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K7R163684B-FC20T
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 1.8 V | 450 ps | 200 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 190 mA | 1.7 V | 450 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | 1 | 70 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LBGA, BGA165,11X15,40 | 165 | unknown | 3A991.B.2.A | 8542.32.00.41 |