Findchips: Parametric Search Results for K8D6316UBM-DI07


Select Parts		Part Number

		K8D6316UBM-DI07 Samsung Semiconductor
		K8D6316UBM-DI07T Samsung Semiconductor
		K8D6316UBMDI0700 Samsung Semiconductor
		K8D6316UBM-DI070 Samsung Semiconductor

			Most Relevant						Technical																						Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Alternate Memory Width	Boot Block	Command User Interface	Common Flash Interface	Data Polling	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Parallel/Serial	Programming Voltage	Ready/Busy	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Pin Count

Check for Price

Yes

Obsolete

67.1089 Mbit

8K,64K

4MX16

70 ns

FLASH

BOTTOM

YES

8,127

4000000

4.1943 M

PARALLEL

2.7 V

YES

30 µA

50 µA

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,32

compliant

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

67.1089 Mbit

8K,64K

4MX16

70 ns

FLASH

BOTTOM

YES

8,127

4000000

4.1943 M

PARALLEL

YES

30 µA

50 µA

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,32

compliant

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

67.1089 Mbit

4MX16

3 V

70 ns

FLASH

BOTTOM

4000000

4.1943 M

ASYNCHRONOUS

PARALLEL

2.7 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1 mm

9 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

VFBGA,

compliant

EAR99

8542.32.00.51

BGA

Check for Price

Yes

Obsolete

67.1089 Mbit

8K,64K

4MX16

3 V

70 ns

FLASH

BOTTOM

YES

8,127

4000000

4.1943 M

ASYNCHRONOUS

PARALLEL

2.7 V

YES

30 µA

50 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1 mm

9 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

VFBGA, BGA48,6X8,32

compliant

EAR99

8542.32.00.51

BGA

Compare

K8D6316UBM-DI07

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

8K,64K

4MX16

70 ns

FLASH

BOTTOM

YES

8,127

4000000

4.1943 M

PARALLEL

2.7 V

YES

30 µA

50 µA

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,32

compliant

EAR99

8542.32.00.51

K8D6316UBM-DI07T

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

8K,64K

4MX16

70 ns

FLASH

BOTTOM

YES

8,127

4000000

4.1943 M

PARALLEL

YES

30 µA

50 µA

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA48,6X8,32

compliant

EAR99

8542.32.00.51

K8D6316UBMDI0700

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

4MX16

3 V

70 ns

FLASH

BOTTOM

4000000

4.1943 M

ASYNCHRONOUS

PARALLEL

2.7 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1 mm

9 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

VFBGA,

compliant

EAR99

8542.32.00.51

BGA

K8D6316UBM-DI070

Samsung Semiconductor

Check for Price

Yes

Obsolete

67.1089 Mbit

8K,64K

4MX16

3 V

70 ns

FLASH

BOTTOM

YES

8,127

4000000

4.1943 M

ASYNCHRONOUS

PARALLEL

2.7 V

YES

30 µA

50 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B48

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1 mm

9 mm

6 mm

SAMSUNG SEMICONDUCTOR INC

VFBGA, BGA48,6X8,32

compliant

EAR99

8542.32.00.51

BGA

Parametric results for: K8D6316UBM-DI07 under Flash Memories