Parametric results for: K9F1208U0B-D under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Data Polling JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

30 ns 4

4 hits Apply

CONTAINS ADDITIONAL 16M BIT SPARE MEMORY 2

4 hits Apply

YES 2

4 hits Apply

NO 2

4 hits Apply

R-PBGA-B63 4

4 hits Apply

13 mm 2

4 hits Apply

Manufacturer (1)

Samsung Semiconductor 4

4 hits Apply

Memory Density (1)

536.8709 Mbit 4

4 hits Apply

FLASH 4

4 hits Apply

Memory Width (1)

8 4

4 hits Apply

1.0 2

4 hits Apply

4K 2

4 hits Apply

63 4

4 hits Apply

67.1089 M 4

4 hits Apply

6.4E7 4

4 hits Apply

ASYNCHRONOUS 2

4 hits Apply

70.0 °C 2 85.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

-40.0 °C 2 0.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

Organization (1)

64MX8 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

FBGA 2 VFBGA 2

4 hits Apply

BGA63,10X12,32 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

GRID ARRAY, FINE PITCH 2 GRID ARRAY, VERY THIN PROFILE, FINE PITCH 2

4 hits Apply

512 words 2

4 hits Apply

Sector Size (1)

16K 2

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

4 hits Apply