Parametric results for: KFN4G16Q2M-DEB8 under Flash Memories

All Filters Access Time-Max Command User Interface Data Polling JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (2)

9 ns 2 76 ns 2

Min (ns) - Max (ns)

4 hits Apply

YES 4

4 hits Apply

NO 4

4 hits Apply

R-PBGA-B63 4

4 hits Apply

e1 2

4 hits Apply

13 mm 1

4 hits Apply

Manufacturer (1)

Samsung Semiconductor 4

4 hits Apply

Memory Density (1)

4.295 Gbit 4

4 hits Apply

FLASH 4

4 hits Apply

Memory Width (1)

16 4

4 hits Apply

3 2

4 hits Apply

1.0 1

4 hits Apply

4K 4

4 hits Apply

63 4

4 hits Apply

268.4355 M 4

4 hits Apply

2.56E8 4

4 hits Apply

SYNCHRONOUS 1

4 hits Apply

85.0 °C 4

4 hits Apply

-30.0 °C 4

4 hits Apply

Organization (1)

256MX16 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

FBGA 3 TFBGA 1

4 hits Apply

BGA63,10X12,32 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

GRID ARRAY, FINE PITCH 3 GRID ARRAY, THIN PROFILE, FINE PITCH 1

4 hits Apply

1K words 4

4 hits Apply

Sector Size (1)

64K 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 4

4 hits Apply