Parametric results for: KFWAGH6U4M-DIB6 under Flash Memories

All Filters Access Time-Max Additional Feature Boot Block Command User Interface Data Polling JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

76 ns 1

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SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE 1

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INDEPENDENT 1

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YES 1

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NO 1

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R-PBGA-B63 1

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13 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

17.1799 Gbit 1

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FLASH 1

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Memory Width (1)

16 1

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1.0 1

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4K 1

1 hit Apply

63 1

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1.0737 G 1

1 hit Apply

1.0E9 1

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SYNCHRONOUS 1

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85.0 °C 1

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-40.0 °C 1

1 hit Apply

Organization (1)

1GX16 1

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PLASTIC/EPOXY 1

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LFBGA 1

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BGA63,10X12,32 1

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RECTANGULAR 1

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GRID ARRAY, LOW PROFILE, FINE PITCH 1

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2K words 1

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Sector Size (1)

256K 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply