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KM23V4100DG
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 3 V | 120 ns | MASK ROM | USER CONFIGURABLE AS 256K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY | 8 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 30 µA | 25 µA | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PDSO-G40 | Not Qualified | e0 | 70 °C | 40 | PLASTIC/EPOXY | SOP | SOP40,.56 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 2.8 mm | 25.65 mm | 10.67 mm | SAMSUNG SEMICONDUCTOR INC | SOIC | SOP, SOP40,.56 | 40 | unknown | EAR99 | 8542.32.00.71 | |||
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KM23V4100DET
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 3 V | 120 ns | MASK ROM | USER CONFIGURABLE AS 256K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY | 8 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 30 µA | 25 µA | 3.3 V | 2.7 V | CMOS | OTHER | R-PDSO-G44 | Not Qualified | e0 | 85 °C | -20 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | unknown | EAR99 | 8542.32.00.71 | ||
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KM23V4100D
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 3 V | 120 ns | MASK ROM | USER CONFIGURABLE AS 256K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY | 8 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 30 µA | 25 µA | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PDIP-T40 | Not Qualified | e0 | 70 °C | 40 | PLASTIC/EPOXY | DIP | DIP40,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 52.42 mm | 15.24 mm | SAMSUNG SEMICONDUCTOR INC | DIP | DIP, DIP40,.6 | 40 | unknown | EAR99 | 8542.32.00.71 | |||
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KM23V4100D-12
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3 V | 120 ns | MASK ROM | CONFIGURABLE AS 256K X 16 | 8 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 30 µA | 20 µA | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PDIP-T40 | Not Qualified | e0 | 70 °C | 40 | PLASTIC/EPOXY | DIP | DIP40,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 52.42 mm | 15.24 mm | SAMSUNG SEMICONDUCTOR INC | DIP | DIP, DIP40,.6 | 40 | unknown | EAR99 | 8542.32.00.71 | |||
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KM23V4100DT-10
Samsung Semiconductor
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Check for Price | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 100 ns | MASK ROM | CONFIGURABLE AS 256K X 16 | 8 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 25 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | 70 °C | 44 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, | 44 | unknown | EAR99 | 8542.32.00.71 | ||||||||
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KM23V4100DET-10
Samsung Semiconductor
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Check for Price | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 100 ns | MASK ROM | CONFIGURABLE AS 256K X 16 | 8 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 25 µA | 3.6 V | 3 V | CMOS | OTHER | R-PDSO-G44 | Not Qualified | 85 °C | -20 °C | 44 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, | 44 | unknown | EAR99 | 8542.32.00.71 | |||||||
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KM23V4100DG-12
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3 V | 120 ns | MASK ROM | CONFIGURABLE AS 256K X 16 | 8 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 30 µA | 20 µA | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PDSO-G40 | Not Qualified | e0 | 70 °C | 40 | PLASTIC/EPOXY | SOP | SOP40,.56 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 2.8 mm | 25.65 mm | 10.67 mm | SAMSUNG SEMICONDUCTOR INC | SOIC | 0.525 INCH, SOP-40 | 40 | unknown | EAR99 | 8542.32.00.71 | |||
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KM23V4100DT
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 3 V | 120 ns | MASK ROM | USER CONFIGURABLE AS 256K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY | 8 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 30 µA | 25 µA | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PDSO-G40 | Not Qualified | e0 | 70 °C | 40 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | unknown | EAR99 | 8542.32.00.71 | |||
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KM23V4100D-10
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 100 ns | MASK ROM | CONFIGURABLE AS 256K X 16 | 8 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 30 µA | 25 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDIP-T40 | Not Qualified | e0 | 70 °C | 40 | PLASTIC/EPOXY | DIP | DIP40,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 52.42 mm | 15.24 mm | SAMSUNG SEMICONDUCTOR INC | DIP | DIP, DIP40,.6 | 40 | unknown | EAR99 | 8542.32.00.71 | |||
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KM23V4100DET-12
Samsung Semiconductor
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Check for Price | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3 V | 120 ns | MASK ROM | CONFIGURABLE AS 256K X 16 | 8 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 25 µA | 3.3 V | 2.7 V | CMOS | OTHER | R-PDSO-G44 | Not Qualified | 85 °C | -20 °C | 44 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, | 44 | unknown | EAR99 | 8542.32.00.71 |