Parametric results for: KM41256AJ-10 under DRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

100 ns 1

1 hit Apply

SEPARATE 1

1 hit Apply

R-PQCC-J18 1

1 hit Apply

e0 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

262.144 kbit 1

1 hit Apply

PAGE MODE DRAM 1

1 hit Apply

Memory Width (1)

1 1

1 hit Apply

3 1

1 hit Apply

18 1

1 hit Apply

262.144 k 1

1 hit Apply

256000.0 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

256KX1 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

QCCJ 1

1 hit Apply

LDCC18,.33X.53 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

CHIP CARRIER 1

1 hit Apply

Refresh Cycles (1)

256 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply