Parametric results for: KM416S1020BT-G10T under DRAMs

All Filters Access Time-Max Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (2)

7 ns 1 8 ns 1

Min (ns) - Max (ns)

2 hits Apply

Clock Frequency-Max (fCLK) (2)

83 MHz 1 100 MHz 1

Min (MHz) - Max (MHz)

2 hits Apply

COMMON 2

2 hits Apply

4,8 2

2 hits Apply

R-PDSO-G50 2

2 hits Apply

e0 2

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

16.7772 Mbit 2

2 hits Apply

SYNCHRONOUS DRAM 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

50 2

2 hits Apply

1.0486 M 2

2 hits Apply

1000000.0 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

1MX16 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP 2

2 hits Apply

TSOP50,.46,32 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Refresh Cycles (1)

4096 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply