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KM736V689AT-55
Samsung Semiconductor
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Check for Price | No | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 3.1 ns | 185 MHz | CACHE SRAM | SELF-TIMED WRITE CYCLE | COMMON | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3.14 V | 380 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||
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KM736V689AT-72
Samsung Semiconductor
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Check for Price | No | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 4 ns | 138 MHz | CACHE SRAM | SELF-TIMED WRITE CYCLE | COMMON | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3.14 V | 280 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||
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KM736V689A-50
Samsung Semiconductor
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Check for Price | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 3.1 ns | STANDARD SRAM | SELF-TIMED WRITE CYCLE | 1 | 64000 | 65.536 k | SYNCHRONOUS | PARALLEL | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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KM736V689A-72
Samsung Semiconductor
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Check for Price | Obsolete | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||||||||||||||||||||||||||||||
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KM736V689AT-44
Samsung Semiconductor
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Check for Price | No | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 3.1 ns | 227 MHz | CACHE SRAM | SELF-TIMED WRITE CYCLE | COMMON | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3.14 V | 440 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||
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KM736V689AT-50
Samsung Semiconductor
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Check for Price | No | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 3.1 ns | 200 MHz | CACHE SRAM | SELF-TIMED WRITE CYCLE | COMMON | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3.14 V | 400 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||
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KM736V689A-44
Samsung Semiconductor
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Check for Price | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 3.1 ns | STANDARD SRAM | SELF-TIMED WRITE CYCLE | 1 | 64000 | 65.536 k | SYNCHRONOUS | PARALLEL | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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KM736V689AT-67
Samsung Semiconductor
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Check for Price | No | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 3.8 ns | 149 MHz | CACHE SRAM | SELF-TIMED WRITE CYCLE | COMMON | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3.14 V | 320 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||
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KM736V689AT-60
Samsung Semiconductor
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Check for Price | No | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 3.5 ns | 166 MHz | CACHE SRAM | SELF-TIMED WRITE CYCLE | COMMON | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3.14 V | 360 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||
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KM736V689A-60
Samsung Semiconductor
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Check for Price | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 3.5 ns | STANDARD SRAM | SELF-TIMED WRITE CYCLE | 1 | 64000 | 65.536 k | SYNCHRONOUS | PARALLEL | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 |