Parametric results for: KMM53232004BV under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 4

4 hits Apply

Access Time-Max (2)

50 ns 2 60 ns 2

Min (ns) - Max (ns)

4 hits Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 4

4 hits Apply

COMMON 4

4 hits Apply

R-XSMA-N72 4

4 hits Apply

Manufacturer (1)

Samsung Semiconductor 4

4 hits Apply

Memory Density (1)

1.0737 Gbit 4

4 hits Apply

EDO DRAM MODULE 4

4 hits Apply

Memory Width (1)

32 4

4 hits Apply

1.0 4

4 hits Apply

1 4

4 hits Apply

72 4

4 hits Apply

33.5544 M 4

4 hits Apply

3.2E7 4

4 hits Apply

ASYNCHRONOUS 4

4 hits Apply

70.0 °C 4

4 hits Apply

0.0 °C 4

4 hits Apply

Organization (1)

32MX32 4

4 hits Apply

3-STATE 4

4 hits Apply

UNSPECIFIED 4

4 hits Apply

SIMM 4

4 hits Apply

SSIM72 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

MICROELECTRONIC ASSEMBLY 4

4 hits Apply

Refresh Cycles (1)

4096 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply