Parametric results for: KSD363-R under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

6 A 8

9 hits Apply

Collector-Emitter Voltage-Max (1)

120 V 8

9 hits Apply

Configuration (1)

SINGLE 8

9 hits Apply

DC Current Gain-Min (hFE) (1)

40.0 8

9 hits Apply

TO-220AB 8

9 hits Apply

R-PSFM-T3 8

9 hits Apply

e3 5

9 hits Apply

Manufacturer (5)

Fairchild Semiconductor Corporation 3 Inchange Semiconductor Company Ltd 1 onsemi 2 Rochester Electronics LLC 2 Samsung Semiconductor 1

9 hits Apply

NOT APPLICABLE 2

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

3 8

9 hits Apply

150.0 °C 5

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

FLANGE MOUNT 8

9 hits Apply

Active 4 Contact Manufacturer 1 Obsolete 3 Transferred 1

9 hits Apply

Yes 5

9 hits Apply

NOT APPLICABLE 1 NOT SPECIFIED 1

9 hits Apply

Polarity/Channel Type (1)

NPN 8

9 hits Apply

40 W 1

9 hits Apply

40 W 3

9 hits Apply

Surface Mount (1)

NO 8

9 hits Apply

Transition Frequency-Nom (fT) (1)

10 MHz 8

9 hits Apply