Parametric results for: LE25LB643TT under EEPROMs

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (2)

3 MHz 1 5 MHz 1

Min (MHz) - Max (MHz)

3 hits Apply

20 2

3 hits Apply

1000000.0 Write/Erase Cycles 2

3 hits Apply

R-PDSO-G8 1 S-PDSO-G8 2

3 hits Apply

3 mm 2

3 hits Apply

Manufacturer (3)

onsemi 1 SANYO Electric Co Ltd 1 SANYO Semiconductor Co Ltd 1

3 hits Apply

Memory Density (1)

65.536 kbit 3

3 hits Apply

EEPROM 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1.0 2

3 hits Apply

8 3

3 hits Apply

8.192 k 3

3 hits Apply

8000.0 3

3 hits Apply

SYNCHRONOUS 2

3 hits Apply

85.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (1)

8KX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

TSSOP 3

3 hits Apply

TSSOP8,.19 2

3 hits Apply

RECTANGULAR 1 SQUARE 2

3 hits Apply

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 2

3 hits Apply