Parametric results for: M12S16161A-10TG under DRAMs

All Filters Access Time-Max Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

9 ns 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

100 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

1,2,4,8 1

1 hit Apply

R-PDSO-G50 1

1 hit Apply

Manufacturer (1)

Elite Semiconductor Memory Technology Inc 1

1 hit Apply

Memory Density (1)

16.7772 Mbit 1

1 hit Apply

SYNCHRONOUS DRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

50 1

1 hit Apply

1.0486 M 1

1 hit Apply

1000000.0 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

1MX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSOP 1

1 hit Apply

TSOP50,.46,32 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Refresh Cycles (1)

2048 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 1

1 hit Apply