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M13S64164A-4BIG2Y
Elite Semiconductor Memory Technology Inc
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Check for Price | Contact Manufacturer | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TFBGA, | unknown | EAR99 | 8542.32.00.02 | |||||||
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M13S64164A-6BG2Y
Elite Semiconductor Memory Technology Inc
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Check for Price | Contact Manufacturer | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B60 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TFBGA, | unknown | EAR99 | 8542.32.00.02 | ||||||
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M13S64164A-4TVAG2Y
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PDSO-G66 | 105 °C | -40 °C | 66 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, | unknown | EAR99 | 8542.32.00.02 | ||||||||
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M13S64164A-5TG2Y
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PDSO-G66 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 66 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, | unknown | EAR99 | 8542.32.00.02 | ||||||
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M13S64164A-6BG
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | 70 °C | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TFBGA, | unknown | EAR99 | 8542.32.00.02 | BGA | 60 | |||||
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M13S64164A-5TIG2Y
Elite Semiconductor Memory Technology Inc
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Check for Price | Contact Manufacturer | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PDSO-G66 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, | unknown | EAR99 | 8542.32.00.02 | |||||||
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M13S64164A-5BIG2Y
Elite Semiconductor Memory Technology Inc
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Check for Price | Contact Manufacturer | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TFBGA, | unknown | EAR99 | 8542.32.00.02 | |||||||
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M13S64164A-6BVG2Y
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TFBGA, | unknown | EAR99 | 8542.32.00.02 | |||||||
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M13S64164A-5BG
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | 70 °C | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TFBGA, | unknown | EAR99 | 8542.32.00.02 | BGA | 60 | |||||
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M13S64164A-4BVAG2Y
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 105 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TFBGA, | unknown | EAR99 | 8542.32.00.02 |