Parametric results for: M24C08 under EEPROMs

All Filters Access Time-Max Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance I2C Control Byte JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Power Supplies Supply Voltage-Nom (Vsup) Access Time-Max (1)

900 ns 8

1,169 hits Apply

16 BYTE PAGE WRITE MODE; DATA RETENTION > 40 YEARS 122 16 BYTE PAGE WRITE; WRITE PROTECT; DATA RETENTION>40 YEARS 25 2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS 22 ALSO AVALIABLE IN 100 KHZ AND VOLATGE AND TEMPERATURE CAPTURED BASED ON ORDERING INFORMATION 18 DATA RETENTION > 40 YEARS 118

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1 6

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Clock Frequency-Max (fCLK) (4)

100 kHz 218 400 kHz 760 800 kHz 13 1 MHz 24

Min (MHz) - Max (MHz)

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10 4 40 789 50 24 100 48

Min - Max

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100000.0 Write/Erase Cycles 4 600000.0 Write/Erase Cycles 12 900000.0 Write/Erase Cycles 12 1000000.0 Write/Erase Cycles 685 1.0E7 Write/Erase Cycles 2 1.0E8 Write/Erase Cycles 8

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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10100MMR 6 1010DMMR 705 1010DXXR 12

1,169 hits Apply

R-PBGA-B4 12 R-PBGA-B5 46 R-PDIP-T8 212 R-PDSO-G14 20 R-PDSO-G5 6 R-PDSO-G8 572 R-PDSO-N5 12 R-PDSO-N8 58 R-XDSO-N8 70 S-PDSO-G8 82 X-XUUC-N5 2

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e0 399 e1 1 e3 101 e4 174

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695 µm 12 1.215 mm 46 1.7 mm 12 3 mm 196 4.4 mm 230 4.9 mm 266 9 mm 18 9.27 mm 88 9.55 mm 15 9.817 mm 80

Min (mm) - Max (mm)

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Manufacturer (6)

Fairchild Semiconductor Corporation 277 National Semiconductor Corporation 6 Rochester Electronics LLC 60 Shanghai Fudan Microelectronics Group Co Limited 79 STMicroelectronics 712 Texas Instruments 35

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Memory Density (2)

8.192 kbit 1,044 16.384 kbit 54

Min (bit) - Max (bit)

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EEPROM 1,137

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Memory Width (2)

1 50 8 1,048

Min - Max

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1 197 3 1 NOT APPLICABLE 3 NOT SPECIFIED 4

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1.0 1,015

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14 20 4 12 5 66 8 994

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1.024 k 994 2.048 k 54 8.192 k 50

Min (words) - Max (words)

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1000.0 994 2000.0 54 8000.0 50

Min - Max

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SYNCHRONOUS 1,015

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70.0 °C 195 85.0 °C 461 105.0 °C 12 125.0 °C 428

Min (°C) - Max (°C)

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-55.0 °C 7 -40.0 °C 823 -20.0 °C 71 0.0 °C 195

Min (°C) - Max (°C)

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Organization (3)

1KX8 994 2KX8 54 8KX1 50

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3-STATE 19 OPEN-DRAIN 116

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PLASTIC/EPOXY 1,020 UNSPECIFIED 72

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DIE 2 DIP 212 HVSON 74 SON 14 SOP 340 TSOP 6 TSSOP 334 VFBGA 58 VSON 52

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BGA5,3X3,14/8 11 DIP8,.3 122 SOLCC8,.08,16 6 SOLCC8,.11,20 97 SOLCC8,.12,20 4 SOP14,.4 7 SOP8,.25 197 SOP8,.3 1 TSOP5/6,.11,37 6 TSSOP8,.19 80 TSSOP8,.25 186 WAFER 2

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RECTANGULAR 1,008 SQUARE 82 UNSPECIFIED 2

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GRID ARRAY 4 GRID ARRAY, VERY THIN PROFILE, FINE PITCH 54 IN-LINE 212 SMALL OUTLINE 354 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 74 SMALL OUTLINE, THIN PROFILE 6 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 334 SMALL OUTLINE, VERY THIN PROFILE 52 UNCASED CHIP 2

1,169 hits Apply

Power Supplies (3)

2/5 V 5 3/5 V 5 5 V 12

1,169 hits Apply

Supply Voltage-Nom (Vsup) (5)

1.8 V 42 2.5 V 176 3 V 58 3.3 V 150 5 V 447

Min (V) - Max (V)

1,169 hits Apply