Parametric results for: M28F512-12C6 under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (2)

12 ns 2 120 ns 2

Min (ns) - Max (ns)

4 hits Apply

BULK ERASE 2

4 hits Apply

YES 3

4 hits Apply

NO 3

4 hits Apply

100.0 Write/Erase Cycles 1 1000.0 Write/Erase Cycles 1 10000.0 Write/Erase Cycles 1

Min (Write/EraseCycles) - Max (Write/EraseCycles)

4 hits Apply

R-PQCC-J32 4

4 hits Apply

e0 2 e3 1

4 hits Apply

13.995 mm 2

4 hits Apply

Manufacturer (1)

STMicroelectronics 4

4 hits Apply

Memory Density (1)

524.288 kbit 4

4 hits Apply

FLASH 4

4 hits Apply

Memory Width (1)

8 4

4 hits Apply

1.0 2

4 hits Apply

32 4

4 hits Apply

65.536 k 4

4 hits Apply

64000.0 4

4 hits Apply

ASYNCHRONOUS 2

4 hits Apply

85.0 °C 4

4 hits Apply

-40.0 °C 4

4 hits Apply

Organization (1)

64KX8 4

4 hits Apply

3-STATE 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

QCCJ 4

4 hits Apply

LDCC32,.5X.6 3

4 hits Apply

RECTANGULAR 4

4 hits Apply

CHIP CARRIER 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply