Parametric results for: M28W640HCT70N6E under Flash Memories

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Manufacturer Part Number: m28w640hct70n6e
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M28W640HCT70N6E
Micron Technology Inc
Check for Price Yes Yes Obsolete 67.1089 Mbit 16 4K,32K 4MX16 3 V 70 ns FLASH TOP BOOT BLOCK TOP YES YES NO 1 8,127 4000000 4.1943 M ASYNCHRONOUS 4 words PARALLEL 3 V 5 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO NOR TYPE R-PDSO-G48 Not Qualified e3 85 °C -40 °C 260 30 48 PLASTIC/EPOXY TSSOP TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm MICRON TECHNOLOGY INC TSOP TSSOP, TSSOP48,.8,20 48 compliant EAR99 8542.32.00.51
M28W640HCT70N6E
Numonyx Memory Solutions
Check for Price Yes Yes Transferred 67.1089 Mbit 16 4K,32K 4MX16 3 V 70 ns FLASH TOP BOOT BLOCK TOP YES YES NO 1 8,127 4000000 4.1943 M ASYNCHRONOUS 4 words PARALLEL 3 V 5 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO NOR TYPE R-PDSO-G48 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY TSSOP TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm NUMONYX TSOP TSSOP, TSSOP48,.8,20 48 unknown EAR99 8542.32.00.51
M28W640HCT70N6E
STMicroelectronics
Check for Price Yes Yes Transferred 67.1089 Mbit 16 4K,32K 4MX16 3 V 70 ns FLASH TOP YES YES NO 1 8,127 4000000 4.1943 M ASYNCHRONOUS 4 words PARALLEL 3 V 5 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO NOR TYPE R-PDSO-G48 Not Qualified e3/e6 85 °C -40 °C 260 40 48 PLASTIC/EPOXY TSSOP TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES MATTE TIN/TIN BISMUTH GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm STMICROELECTRONICS TSOP 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 48 compliant EAR99 8542.32.00.51