Parametric results for: M29DW640F70ZE6E under Flash Memories

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Manufacturer Part Number: m29dw640f70ze6e
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M29DW640F70ZE6E
Micron Technology Inc
Check for Price Yes Obsolete 67.1089 Mbit 16 8K,64K 4MX16 70 ns FLASH 8 BOTTOM/TOP YES YES YES 16,126 4000000 4.1943 M 4/8 words PARALLEL YES 100 µA 20 µA CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified 85 °C -40 °C 48 PLASTIC/EPOXY FBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM MICRON TECHNOLOGY INC FBGA, BGA48,6X8,32 compliant EAR99 8542.32.00.51
M29DW640F70ZE6E
Numonyx Memory Solutions
Check for Price Yes Yes Obsolete 67.1089 Mbit 16 8K,64K 4MX16 3 V 70 ns FLASH 8 BOTTOM/TOP YES YES YES 1 16,126 4000000 4.1943 M ASYNCHRONOUS 4/8 words PARALLEL 3 V YES 100 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY TFBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm NUMONYX 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 unknown EAR99 8542.32.00.51 BGA 48
M29DW640F70ZE6E
STMicroelectronics
Check for Price Yes Obsolete 67.1089 Mbit 16 8K,64K 4MX16 3 V 70 ns FLASH 100,000 PROGRAM/ERASE CYCLES 8 BOTTOM/TOP YES YES YES 1 16,126 4000000 4.1943 M ASYNCHRONOUS 4/8 words PARALLEL 3 V YES 100 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified e1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm STMICROELECTRONICS TFBGA, BGA48,6X8,32 compliant EAR99 8542.32.00.51 BGA 48 STMicroelectronics