Parametric results for: M29F040-120N1R under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

120 ns 2

2 hits Apply

100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE 2

2 hits Apply

YES 2

2 hits Apply

YES 2

2 hits Apply

20 2

2 hits Apply

100000.0 Write/Erase Cycles 2

2 hits Apply

R-PDSO-G32 2

2 hits Apply

e0 2

2 hits Apply

18.4 mm 2

2 hits Apply

Manufacturer (1)

STMicroelectronics 2

2 hits Apply

Memory Density (1)

4.1943 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 2

2 hits Apply

8 2

2 hits Apply

32 2

2 hits Apply

524.288 k 2

2 hits Apply

512000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

512KX8 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP1-R 2

2 hits Apply

TSSOP32,.8,20 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Sector Size (1)

64K 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply