Parametric results for: M29W800AB120ZA6T under Flash Memories

All Filters Access Time-Max Additional Feature Alternate Memory Width Boot Block Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

120 ns 2

2 hits Apply

20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK 2

2 hits Apply

8 2

2 hits Apply

BOTTOM 2

2 hits Apply

YES 1

2 hits Apply

YES 1

2 hits Apply

20 2

2 hits Apply

100000.0 Write/Erase Cycles 1

2 hits Apply

R-PBGA-B48 2

2 hits Apply

e1 1

2 hits Apply

9 mm 2

2 hits Apply

Manufacturer (2)

Numonyx Memory Solutions 1 STMicroelectronics 1

2 hits Apply

Memory Density (1)

8.3886 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

1.0 2

2 hits Apply

1,2,1,15 1

2 hits Apply

48 2

2 hits Apply

524.288 k 2

2 hits Apply

512000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

512KX16 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TFBGA 2

2 hits Apply

BGA48,6X8,32 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

GRID ARRAY, THIN PROFILE, FINE PITCH 2

2 hits Apply

Sector Size (1)

16K,8K,32K,64K 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

2 hits Apply