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M36P0R9070E0ZACF
Numonyx Memory Solutions
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Check for Price | Yes | Transferred | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 96 ns | MEMORY CIRCUIT | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 | FLASH+PSRAM | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 200 µA | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B107 | Not Qualified | 85 °C | -30 °C | NOT SPECIFIED | NOT SPECIFIED | 107 | PLASTIC/EPOXY | TFBGA | BGA107,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | NUMONYX | BGA | TFBGA, BGA107,9X12,32 | 107 | unknown | EAR99 | 8542.32.00.71 | |||||
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M36P0R9070E0ZAQF
STMicroelectronics
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Check for Price | Transferred | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | MEMORY CIRCUIT | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B107 | Not Qualified | 85 °C | -30 °C | 107 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | STMICROELECTRONICS | BGA | TFBGA, | 107 | unknown | EAR99 | 8542.32.00.71 | |||||||||||||
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M36P0R9070E0ZACF
STMicroelectronics
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Check for Price | Yes | Transferred | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 70 ns | MEMORY CIRCUIT | PSRAM IS ORGANISED AS 8M X 16BIT | FLASH+PSRAM | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B107 | Not Qualified | 85 °C | -30 °C | 260 | 40 | 107 | PLASTIC/EPOXY | TFBGA | BGA107,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | STMICROELECTRONICS | BGA | 8 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-107 | 107 | compliant | EAR99 | 8542.32.00.71 | ||||||
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M36P0R9070E0ZAC
STMicroelectronics
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Check for Price | No | Transferred | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 70 ns | MEMORY CIRCUIT | PSRAM IS ORGANISED AS 8M X 16BIT | FLASH+PSRAM | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B107 | Not Qualified | e0 | 85 °C | -30 °C | 107 | PLASTIC/EPOXY | TFBGA | BGA107,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | STMICROELECTRONICS | BGA | 8 X 11 MM, 0.80 MM PITCH, TFBGA-107 | 107 | compliant | EAR99 | 8542.32.00.71 | ||||||
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M36P0R9070E0ZACE
STMicroelectronics
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Check for Price | Yes | Transferred | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 70 ns | MEMORY CIRCUIT | PSRAM IS ORGANISED AS 8M X 16BIT | FLASH+PSRAM | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B107 | Not Qualified | 85 °C | -30 °C | 260 | 40 | 107 | PLASTIC/EPOXY | TFBGA | BGA107,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | STMICROELECTRONICS | BGA | 8 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-107 | 107 | compliant | EAR99 | 8542.32.00.71 | ||||||
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M36P0R9070E0ZAC
Micron Technology Inc
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Check for Price | No | Yes | Obsolete | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 96 ns | MEMORY CIRCUIT | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 | FLASH+PSRAM | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 200 µA | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B107 | Not Qualified | e0 | 85 °C | -30 °C | NOT SPECIFIED | NOT SPECIFIED | 107 | PLASTIC/EPOXY | TFBGA | BGA107,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA107,9X12,32 | 107 | compliant | EAR99 | 8542.32.00.71 | |||
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M36P0R9070E0ZAQF
Numonyx Memory Solutions
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Check for Price | Obsolete | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | MEMORY CIRCUIT | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B107 | Not Qualified | 85 °C | -30 °C | 107 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | NUMONYX | BGA | TFBGA, | 107 | unknown | EAR99 | 8542.32.00.71 | |||||||||||||
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M36P0R9070E0ZAC
Numonyx Memory Solutions
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Check for Price | Yes | Transferred | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 96 ns | MEMORY CIRCUIT | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 | FLASH+PSRAM | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 200 µA | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B107 | Not Qualified | 85 °C | -30 °C | NOT SPECIFIED | NOT SPECIFIED | 107 | PLASTIC/EPOXY | TFBGA | BGA107,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | NUMONYX | BGA | TFBGA, BGA107,9X12,32 | 107 | unknown | EAR99 | 8542.32.00.71 | |||||
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M36P0R9070E0ZACF
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 96 ns | MEMORY CIRCUIT | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 | FLASH+PSRAM | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 200 µA | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B107 | Not Qualified | e1 | 85 °C | -30 °C | 107 | PLASTIC/EPOXY | TFBGA | BGA107,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA107,9X12,32 | 107 | compliant | EAR99 | 8542.32.00.71 | ||||
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M36P0R9070E0ZAQE
STMicroelectronics
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Check for Price | Transferred | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | MEMORY CIRCUIT | 1 | 32000000 | 33.5544 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B107 | Not Qualified | 85 °C | -30 °C | 107 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 8 mm | STMICROELECTRONICS | BGA | TFBGA, | 107 | unknown | EAR99 | 8542.32.00.71 |