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Parametric results for: M6MGB under Other Memory ICs

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Manufacturer Part Number: m6mgb
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M6MGB641S8BKT
 Renesas Electronics Corporation 		Check for Price Obsolete 67.1089 Mbit 16 4MX16 MEMORY CIRCUIT SRAM IS ORGANIZED AS 512K X 16 / 1M X 8; FLASH IS ALSO ORGANIZED AS 8M X 8 1 4000000 4.1943 M ASYNCHRONOUS 3 V 2.7 V CMOS INDUSTRIAL R-PDSO-G52 Not Qualified 85 °C -40 °C 52 PLASTIC/EPOXY SSOP RECTANGULAR SMALL OUTLINE, SHRINK PITCH YES GULL WING 400 µm DUAL 10.79 mm RENESAS TECHNOLOGY CORP TSOP2 SSOP, 52 unknown EAR99 8542.32.00.71
M6MGB64BS8BWG-P
 Renesas Electronics Corporation 		Check for Price Obsolete 67.1089 Mbit 16 4MX16 MEMORY CIRCUIT SRAM IS ORGANIZED AS 512K X 16 1 4000000 4.1943 M ASYNCHRONOUS 3 V 2.7 V CMOS INDUSTRIAL R-PBGA-B67 Not Qualified 85 °C -40 °C 67 PLASTIC/EPOXY FBGA RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM 10.8 mm 8.5 mm RENESAS TECHNOLOGY CORP BGA FBGA, 67 unknown EAR99 8542.32.00.71
M6MGB331S8AKT
 Renesas Electronics Corporation 		Check for Price Obsolete RENESAS TECHNOLOGY CORP , unknown EAR99 8542.32.00.71
M6MGB160S4BVP
 Mitsubishi Electric 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 90 ns MEMORY CIRCUIT ALSO CONTAINS 256K X 16 SRAM FLASH+SRAM 1 1000000 1.0486 M ASYNCHRONOUS 70 µA 3.6 V 2.7 V CMOS OTHER R-PDSO-G48 Not Qualified e0 85 °C -20 °C 48 PLASTIC/EPOXY TSOP1 TSSOP48,.55,16 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 400 µm DUAL 1.2 mm 12.4 mm 10 mm MITSUBISHI ELECTRIC CORP TSOP1 TSOP1, TSSOP48,.55,16 48 unknown EAR99 8542.32.00.71
M6MGB166S2BWG-90
 Mitsubishi Electric 		Check for Price Obsolete 16.7772 Mbit 16 1MX16 3.3 V MEMORY CIRCUIT COMBINATION OF 3.3V FLASH MEM & SRAM IN ... more 1 1000000 1.0486 M ASYNCHRONOUS 3.6 V 2.7 V CMOS OTHER R-PBGA-B72 Not Qualified 85 °C -20 °C 72 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES BALL BOTTOM MITSUBISHI ELECTRIC CORP BGA BGA, 72 unknown EAR99 8542.32.00.71
M6MGB166S2BWG
 Mitsubishi Electric 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 90 ns MEMORY CIRCUIT COMBINATION OF 3.3V FLASH MEM & SRAM IN ... more FLASH+SRAM 1 1000000 1.0486 M ASYNCHRONOUS 60 µA 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B72 Not Qualified e0 85 °C -40 °C 72 PLASTIC/EPOXY BGA BGA72(UNSPEC) RECTANGULAR GRID ARRAY YES Tin/Lead (Sn/Pb) BALL BOTTOM MITSUBISHI ELECTRIC CORP BGA BGA, BGA72(UNSPEC) 72 unknown EAR99 8542.32.00.71
M6MGB64BM17AWG
 Renesas Electronics Corporation 		Check for Price Yes Obsolete 3 260 20 RENESAS TECHNOLOGY CORP , unknown EAR99 8542.32.00.71
M6MGB33BS8BWG
 Renesas Electronics Corporation 		Check for Price Obsolete RENESAS TECHNOLOGY CORP , unknown EAR99 8542.32.00.71
M6MGB166S4BWG-90
 Mitsubishi Electric 		Check for Price Obsolete 16.7772 Mbit 16 1MX16 3.3 V MEMORY CIRCUIT COMBINATION OF 3.3V FLASH MEM & SRAM IN ... more 1 1000000 1.0486 M ASYNCHRONOUS 3.6 V 2.7 V CMOS OTHER R-PBGA-B72 Not Qualified 85 °C -20 °C 72 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES BALL BOTTOM MITSUBISHI ELECTRIC CORP BGA BGA, 72 unknown EAR99 8542.32.00.71
M6MGB162S2BVP
 Mitsubishi Electric 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 90 ns MEMORY CIRCUIT ALSO CONTAINS 256K X 8 SRAM FLASH+SRAM 1 1000000 1.0486 M ASYNCHRONOUS 60 µA 3.6 V 2.7 V CMOS OTHER R-PDSO-G48 Not Qualified e0 85 °C -20 °C 48 PLASTIC/EPOXY TSOP1 TSSOP48,.55,16 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 400 µm DUAL 1.2 mm 12.4 mm 10 mm MITSUBISHI ELECTRIC CORP TSOP1 TSOP1, TSSOP48,.55,16 48 unknown EAR99 8542.32.00.71
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