Parametric results for: M95512-WDW6TGK under EEPROMs

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

10 MHz 3

3 hits Apply

40 3

3 hits Apply

100000.0 Write/Erase Cycles 1 1000000.0 Write/Erase Cycles 2

Min (Write/EraseCycles) - Max (Write/EraseCycles)

3 hits Apply

R-PDSO-G8 3

3 hits Apply

e4 3

3 hits Apply

4.4 mm 3

3 hits Apply

Manufacturer (1)

STMicroelectronics 3

3 hits Apply

Memory Density (1)

524.288 kbit 3

3 hits Apply

EEPROM 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1 1 3 1

3 hits Apply

1.0 3

3 hits Apply

8 3

3 hits Apply

65.536 k 3

3 hits Apply

64000.0 3

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

85.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (1)

64KX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

TSSOP 3

3 hits Apply

TSSOP8,.25 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 3

3 hits Apply