Findchips: Parametric Search Results for M95640-BN6


Select Parts		Part Number

		M95640-BN6T STMicroelectronics
		M95640-BN6G STMicroelectronics
		M95640-BN6 STMicroelectronics
		M95640-BN6P STMicroelectronics

			Most Relevant					Technical																			Compliance			Operating Conditions		Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Clock Frequency-Max (fCLK)	Memory IC Type	Additional Feature	Data Retention Time-Min	Endurance	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Serial Bus Type	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Write Cycle Time-Max (tWC)	Write Protection	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

20 MHz

EEPROM

8000

8.192 k

SYNCHRONOUS

SERIAL

SPI

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

Tin/Lead (Sn60Pb40)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

PLASTIC, DIP-8

not_compliant

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

20 MHz

EEPROM

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

1000000 Write/Erase Cycles

8000

8.192 k

SYNCHRONOUS

SERIAL

SPI

2 µA

5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP, DIP8,.3

compliant

EAR99

8542.32.00.51

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

20 MHz

EEPROM

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

1000000 Write/Erase Cycles

8000

8.192 k

SYNCHRONOUS

3-STATE

SERIAL

SPI

2 µA

5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

PLASTIC, DIP-8

not_compliant

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

20 MHz

EEPROM

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

1000000 Write/Erase Cycles

8000

8.192 k

SYNCHRONOUS

SERIAL

SPI

2 µA

5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP, DIP8,.3

compliant

EAR99

8542.32.00.51

Compare

M95640-BN6T

STMicroelectronics

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

20 MHz

EEPROM

8000

8.192 k

SYNCHRONOUS

SERIAL

SPI

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

Tin/Lead (Sn60Pb40)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

PLASTIC, DIP-8

not_compliant

EAR99

8542.32.00.51

M95640-BN6G

STMicroelectronics

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

20 MHz

EEPROM

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

1000000 Write/Erase Cycles

8000

8.192 k

SYNCHRONOUS

SERIAL

SPI

2 µA

5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP, DIP8,.3

compliant

EAR99

8542.32.00.51

M95640-BN6

STMicroelectronics

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

20 MHz

EEPROM

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

1000000 Write/Erase Cycles

8000

8.192 k

SYNCHRONOUS

3-STATE

SERIAL

SPI

2 µA

5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

PLASTIC, DIP-8

not_compliant

EAR99

8542.32.00.51

M95640-BN6P

STMicroelectronics

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

20 MHz

EEPROM

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

1000000 Write/Erase Cycles

8000

8.192 k

SYNCHRONOUS

SERIAL

SPI

2 µA

5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP, DIP8,.3

compliant

EAR99

8542.32.00.51

Parametric results for: M95640-BN6 under EEPROMs