Parametric results for: M95640-WMN3T/P under EEPROMs

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Manufacturer Part Number: m95640wmn3tp
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M95640-WMN3TP/PC
STMicroelectronics
Check for Price Yes Yes Obsolete 65.536 kbit 8 8KX8 5 V 10 MHz EEPROM 40 1000000 Write/Erase Cycles 1 8000 8.192 k SYNCHRONOUS SERIAL SPI 2 µA 6 µA 5.5 V 3 V CMOS AUTOMOTIVE 5 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e4 1 125 °C -40 °C 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES NICKEL PALLADIUM GOLD GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm STMICROELECTRONICS SOIC 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOP-8 8 compliant EAR99 8542.32.00.51
M95640-WMN3TP
STMicroelectronics
Check for Price Yes Yes Obsolete 65.536 kbit 8 8KX8 5 V 3/5 V 10 MHz EEPROM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION 40 1000000 Write/Erase Cycles 1 8000 8.192 k SYNCHRONOUS SERIAL SPI 2 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e4 1 125 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm STMICROELECTRONICS SOIC SOP, SOP8,.25 8 compliant
M95640-WMN3TP/B
STMicroelectronics
Check for Price Yes Yes Obsolete 65.536 kbit 8 8KX8 5 V 5 MHz EEPROM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION 40 1000000 Write/Erase Cycles 1 8000 8.192 k SYNCHRONOUS SERIAL SPI 2 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e4 1 125 °C -40 °C NOT SPECIFIED NOT SPECIFIED 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm STMICROELECTRONICS SOIC 0.150 INCH, ROHS COMPLIANT, PLASTIC, SO-8 8 compliant EAR99 8542.32.00.51
M95640-WMN3TP/K
STMicroelectronics
Check for Price Active 65.536 kbit 8 8KX8 EEPROM 1 8000 8.192 k SYNCHRONOUS SERIAL SPI 5.5 V 2.5 V CMOS AUTOMOTIVE 4 ms R-PDSO-G8 125 °C -40 °C NOT SPECIFIED AEC-Q100 NOT SPECIFIED 8 PLASTIC/EPOXY SOP RECTANGULAR SMALL OUTLINE YES GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm STMICROELECTRONICS SOP-8 compliant EAR99 8542.32.00.51
M95640-WMN3TP/PB
STMicroelectronics
Check for Price Yes Yes Obsolete 65.536 kbit 8 8KX8 5 MHz EEPROM 40 1000000 Write/Erase Cycles 1 8000 8.192 k SYNCHRONOUS SERIAL SPI 2 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e4 1 125 °C -40 °C NOT SPECIFIED NOT SPECIFIED 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm STMICROELECTRONICS SOIC 0.150 INCH, PLASTIC, ROHS COMPLIANT, SOP-8 8 compliant EAR99 8542.32.00.51
M95640-WMN3TP/P
STMicroelectronics
Check for Price Yes Yes Obsolete 65.536 kbit 8 8KX8 5 V 5 MHz EEPROM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION 40 1000000 Write/Erase Cycles 1 8000 8.192 k SYNCHRONOUS SERIAL SPI 2 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e4 1 125 °C -40 °C 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES NICKEL PALLADIUM GOLD GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm STMICROELECTRONICS SOIC 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOP-8 8 compliant EAR99 8542.32.00.51
M95640-WMN3T/P
STMicroelectronics
Check for Price Yes Yes Obsolete 65.536 kbit 8 8KX8 5 V 5 MHz EEPROM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION 40 1000000 Write/Erase Cycles 1 8000 8.192 k SYNCHRONOUS SERIAL SPI 2 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e4 1 125 °C -40 °C 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES NICKEL PALLADIUM GOLD GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm STMICROELECTRONICS SOIC 0.150 INCH, PLASTIC, SO-8 8 compliant EAR99 8542.32.00.51