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Parametric » Diodes » Microwave Mixer Diodes

Parametric results for: MA4853M under Microwave Mixer Diodes

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Select Parts		Part Number

		MA4853M TE Connectivity
		MA4853M MACOM
		MA4853M Advanced Semiconductor Inc

		Most Relevant						Technical								Compliance		Operating Conditions		Physical							Other
Composite Price	Part Life Cycle Code	Diode Element Material	Diode Type	Configuration	Surface Mount	Number of Elements	Technology	Additional Feature	Frequency Band	Impedance-Max	Impedance-Min	Noise Figure-Max	Pulsed Input Power-Max	Pulsed Input Power-Min	Type of Schottky Barrier	Qualification Status	JESD-30 Code	Operating Temperature-Max	Operating Temperature-Min	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

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Transferred

SILICON

MIXER DIODE

SEPARATE, 2 ELEMENTS

NO

2

SCHOTTKY

MATCHED PAIR, HIGH RELIABILITY

VERY HIGH FREQUENCY TO X BAND

250 Ω

5.5 dB

250 mW

1 W

MEDIUM BARRIER

Not Qualified

O-LALF-W2

150 °C

-65 °C

ISOLATED

2

GLASS

ROUND

LONG FORM

WIRE

AXIAL

TYCO ELECTRONICS M/A-COM

O-LALF-W2

2

unknown

EAR99

8541.10.00.60

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Transferred

M/A-COM INC BURLINGTON SEMICONDUCTOR OPERATION

2

unknown

EAR99

8541.10.00.60

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Active

SILICON

MIXER DIODE

SINGLE

NO

1

SCHOTTKY

HIGH RELIABILITY

250 Ω

125 Ω

5.5 dB

MEDIUM BARRIER

Not Qualified

O-XALF-W2

150 °C

-65 °C

ISOLATED

2

UNSPECIFIED

ROUND

LONG FORM

WIRE

AXIAL

ASI SEMICONDUCTOR INC

O-XALF-W2

2

unknown

EAR99

8541.10.00.60

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TE Connectivity

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Transferred

SILICON

MIXER DIODE

SEPARATE, 2 ELEMENTS

NO

2

SCHOTTKY

MATCHED PAIR, HIGH RELIABILITY

VERY HIGH FREQUENCY TO X BAND

250 Ω

5.5 dB

250 mW

1 W

MEDIUM BARRIER

Not Qualified

O-LALF-W2

150 °C

-65 °C

ISOLATED

2

GLASS

ROUND

LONG FORM

WIRE

AXIAL

TYCO ELECTRONICS M/A-COM

O-LALF-W2

2

unknown

EAR99

8541.10.00.60

MACOM

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Transferred

M/A-COM INC BURLINGTON SEMICONDUCTOR OPERATION

2

unknown

EAR99

8541.10.00.60

Advanced Semiconductor Inc

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Active

SILICON

MIXER DIODE

SINGLE

NO

1

SCHOTTKY

HIGH RELIABILITY

250 Ω

125 Ω

5.5 dB

MEDIUM BARRIER

Not Qualified

O-XALF-W2

150 °C

-65 °C

ISOLATED

2

UNSPECIFIED

ROUND

LONG FORM

WIRE

AXIAL

ASI SEMICONDUCTOR INC

O-XALF-W2

2

unknown

EAR99

8541.10.00.60