Parametric results for: MB81101FBN under DRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (3)

100 ns 10 120 ns 14 150 ns 14

Min (ns) - Max (ns)

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SEPARATE 38

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R-PDIP-T18 10 R-PDSO-J20 6 R-PZIP-T20 6 R-XDIP-T18 10 R-XDSO-J20 6

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e0 38

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Manufacturer (2)

FUJITSU Limited 23 FUJITSU Semiconductor Limited 19

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Memory Density (1)

1.0486 Mbit 38

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NIBBLE MODE DRAM 30 PAGE MODE DRAM 8

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Memory Width (1)

1 38

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18 20 20 18

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1.0486 M 38

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1000000.0 38

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70.0 °C 38

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0.0 °C 38

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Organization (1)

1MX1 38

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3-STATE 38

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CERAMIC 16 PLASTIC/EPOXY 22

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DIP 20 SOJ 12 ZIP 6

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DIP18,.3 20 SOJ20/26,.34 12 ZIP20,.1 6

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RECTANGULAR 38

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IN-LINE 26 SMALL OUTLINE 12

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Refresh Cycles (1)

512 38

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Supply Voltage-Nom (Vsup) (1)

5 V 38

42 hits Apply