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MB84VD22194EH-90PBS
FUJITSU Semiconductor Limited
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | STATIC RAM IS ORGANIZED AS 256K X 16 OR ... more | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | OTHER | R-PBGA-B71 | Not Qualified | 85 °C | -25 °C | 71 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7 mm | FUJITSU SEMICONDUCTOR AMERICA INC | BGA | TFBGA, | 71 | unknown | EAR99 | 8542.32.00.71 | |||||||||||
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MB84VD22194EH-90-PBS
FUJITSU Semiconductor Limited
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Check for Price | No | No | Contact Manufacturer | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | 256K X 16-BIT SRAM ALSO AVAILABLE | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | OTHER | R-PBGA-B71 | Not Qualified | e0 | 85 °C | -25 °C | NOT SPECIFIED | NOT SPECIFIED | 71 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7 mm | FUJITSU LTD | BGA | TFBGA, | 71 | compliant | ||||||||
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MB84VD22194EH-90PBS
FUJITSU Limited
|
Check for Price | No | Active | 33.5544 Mbit | 16 | 2MX16 | 3 V | 90 ns | MEMORY CIRCUIT | SRAM IS CONFIGURED AS 256K X 16/512K X 8 | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 53 µA | 3.3 V | 2.7 V | CMOS | OTHER | R-PBGA-B71 | Not Qualified | e0 | 85 °C | -25 °C | 71 | PLASTIC/EPOXY | TFBGA | BGA71,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7 mm | FUJITSU LTD | BGA | TFBGA, BGA71,8X12,32 | 71 | compliant | EAR99 | 8542.32.00.71 |