Parametric results for: MC454CB646 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 4

6 hits Apply

Access Time-Max (1)

6 ns 6

6 hits Apply

AUTO/SELF REFRESH 2

6 hits Apply

Clock Frequency-Max (fCLK) (2)

100 MHz 1 125 MHz 1

Min (MHz) - Max (MHz)

6 hits Apply

COMMON 2

6 hits Apply

R-PDMA-N168 2 R-XDMA-N168 4

6 hits Apply

Manufacturer (2)

NEC Electronics Group 4 Renesas Electronics Corporation 2

6 hits Apply

Memory Density (1)

268.4355 Mbit 6

6 hits Apply

SYNCHRONOUS DRAM MODULE 6

6 hits Apply

Memory Width (1)

64 6

6 hits Apply

1.0 4

6 hits Apply

1 4

6 hits Apply

168 6

6 hits Apply

4.1943 M 6

6 hits Apply

4000000.0 6

6 hits Apply

SYNCHRONOUS 4

6 hits Apply

70.0 °C 6

6 hits Apply

0.0 °C 6

6 hits Apply

Organization (1)

4MX64 6

6 hits Apply

3-STATE 2

6 hits Apply

PLASTIC/EPOXY 2 UNSPECIFIED 4

6 hits Apply

DIMM 2

6 hits Apply

DIMM168 2

6 hits Apply

RECTANGULAR 6

6 hits Apply

MICROELECTRONIC ASSEMBLY 6

6 hits Apply

Refresh Cycles (1)

4096 2

6 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 6

6 hits Apply