Parametric results for: MFM8516V-12 under Flash Memories

All Filters Access Time-Max Command User Interface Data Polling Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

120 ns 4

4 hits Apply

YES 2

4 hits Apply

YES 2

4 hits Apply

10000.0 Write/Erase Cycles 1 100000.0 Write/Erase Cycles 1

Min (Write/EraseCycles) - Max (Write/EraseCycles)

4 hits Apply

R-CDXA-T32 4

4 hits Apply

e0 2

4 hits Apply

40.64 mm 2

4 hits Apply

Manufacturer (2)

APTA Group Inc 2 Mosaic Semiconductor Inc 2

4 hits Apply

Memory Density (1)

4.1943 Mbit 4

4 hits Apply

FLASH 4

4 hits Apply

Memory Width (1)

8 4

4 hits Apply

1.0 4

4 hits Apply

8 2

4 hits Apply

32 4

4 hits Apply

524.288 k 4

4 hits Apply

512000.0 4

4 hits Apply

ASYNCHRONOUS 4

4 hits Apply

70.0 °C 4

4 hits Apply

0.0 °C 4

4 hits Apply

Organization (1)

512KX8 4

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

DIP 2

4 hits Apply

DIP32,.1 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

VERTICAL IN-LINE 4

4 hits Apply

Sector Size (1)

64K 2

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply