Parametric results for: MRF21120R6 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 3

4 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 3

4 hits Apply

DS Breakdown Voltage-Min (1)

65 V 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

Highest Frequency Band (1)

S BAND 3

4 hits Apply

R-CDFM-F4 3

4 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 NXP Semiconductors 1

4 hits Apply

Number of Elements (1)

2 3

4 hits Apply

Number of Terminals (1)

4 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

200.0 °C 3

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Yes 1

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

389 W 3

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply